Libro Integrated Electronics on Aluminum Nitride: Materials and Devices De Chaudhuri, Reet

portada Integrated Electronics on Aluminum Nitride: Materials and Devices

Formato

Libro Físico

Autor

Reet Chaudhuri

Editorial

Springer

Idioma

Inglés

N° páginas

255

Encuadernación

Tapa Dura

Dimensiones

23.4 x 15.6 x 1.6 cm

Peso

0.56 kg.

ISBN13

9783031171987

Categorías

Fïsica de la materia condensada
Dispositivos y materiales electrónicos
Tecnología de microondas

Integrated Electronics on Aluminum Nitride: Materials and Devices

Reet Chaudhuri (Autor) · Springer · Tapa Dura

Sin Stock

Reseña del libro "Integrated Electronics on Aluminum Nitride: Materials and Devices"

Chapter 1. Introduction.- Chapter 2. Polarization-induced 2D Hole Gases in undoped (In)GaN/AlN Heterostructures.- Chapter 3. GHz-speed GaN/AlN p-channel Heterojunction Field Effect Transistors.- Chapter 4. Polarization-induced 2D Electron and Holes in undoped AlN/GaN/AlN Heterostructures.- Chapter 5. AlN/GaN/AlN High Electron Mobility Transistors.- Chapter 6. Integrated RF Electronics on the AlN Platform.